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MJD112T4 | ST MICROELECTRONICS

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ST MICROELECTRONICS MJD112T4

MJD112 Series NPN 100 V 2 A Complementary Power Darlington - TO-252-3


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 2
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 20
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 3