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MJD210 | ON SEMICONDUCTOR

ON SEMICONDUCTOR MJD210

Power Bipolar Transistor, 5A I(C),25VV(BR)CEO,1-Element, PNP, Silicon, Plastic/Epoxy,2Pin


Ordering Info

In Stock: 0

MOQ: 250

Package Quantity: 250

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Quantity Cost
250+ $2.24


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 5
Collector-emitter Voltage-Max 25
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 140
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 13
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 65