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MJD2955G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MJD2955G

MJD Series 60 V 10 A PNP Complementary Power Transistor - TO-252-3


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 75

Package Quantity: 75

COO: VN

Quantity Cost
75 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 10
Collector-emitter Voltage-Max 60
Configuration SINGLE
DC Current Gain-Min (hFE) 5
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2