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MJD31CT4G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MJD31CT4G

Power Bipolar Transistor, 3A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 2Pin


Ordering Info

In Stock: 190000 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-189999 $0.2329
190000+ $0.2173


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 3
Collector-emitter Voltage-Max 100
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3