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MJD350T4 | ST MICROELECTRONICS

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ST MICROELECTRONICS MJD350T4

MJD350 Series PNP 300 V 0.5 A Complementary Silicon Power Transistor - TO-252


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In Stock: 0

Package Quantity: 2500

COO: CN

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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) .5
Collector-emitter Voltage-Max 300
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 15
Power Dissipation-Max (Abs) 15
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON