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MJD45H11RL | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MJD45H11RL

Power Bipolar Transistor, 8A I(C),80VV(BR)CEO,1-Element, PNP, Silicon, Plastic/Epoxy,2Pin


Ordering Info

In Stock: 366

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 8
Collector-emitter Voltage-Max 80
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 140
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 90