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MMBD352LT1 | ON SEMICONDUCTOR

ON SEMICONDUCTOR MMBD352LT1

SILICON UHF BAND MIXER DIODE


Ordering Info

In Stock: 450

MOQ: 1

Package Quantity: 1

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
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Electrical Characteristics

Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Capacitance-Max 1
Diode Element Material SILICON
Diode Type MIXER DIODE
Frequency Band ULTRA HIGH FREQUENCY
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 125
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Sub Category Microwave Mixer Diodes
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30