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MMBD914LT1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR MMBD914LT1G

MMBD914LT1G Series 100 V 200 mA SMT High-Speed Switching Diode - SOT-23-3


Ordering Info

In Stock: 10770000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.10.00.80

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
9000-10769999 $0.0269
10770000+ $0.0242


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Electrical Characteristics

Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.5
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Operating Temperature-Min -55
Output Current-Max 0.2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100
Reverse Recovery Time-Max 0.004
Sub Category Rectifier Diodes
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40