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![MMBF2201NT1G | ON SEMICONDUCTOR](/Content/Images/default-part-photo.jpg)
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Learn more about ECAD Model here.ON SEMICONDUCTOR MMBF2201NT1G
Ordering Info
In Stock: 0
MOQ: 3000
Package Quantity: 3000
ECCN: EAR99
COO: CN
Subject to tariff fees.
Quantity | Cost |
---|---|
3000-5999 | $0.1484 |
6000+ | $0.1373 |
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Electrical Characteristics
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 |
Drain Current-Max (Abs) (ID) | 0.3 |
Drain Current-Max (ID) | 0.3 |
Drain-source On Resistance-Max | 1 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.15 |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Powers |
Surface Mount | YES |
Terminal Finish | Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |