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MMBFJ309LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMBFJ309LT1G

N-Channel 25 V 10 mA Surface Mount VHF/UHF Amplifier Transistor JFET - SOT-23


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.111
6000+ $0.1036


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Electrical Characteristics

Configuration SINGLE
DS Breakdown Voltage-Min 25
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2.5
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON