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MMBT5551LT1 | ON SEMICONDUCTOR

ON SEMICONDUCTOR MMBT5551LT1

60mA, 160V, NPN, Si, SMALLSIGNALTRANSISTOR,TO-236AB


Ordering Info

In Stock: 3338

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Collector Current-Max (IC) 0.06
Collector-emitter Voltage-Max 160
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Lead (Sn80Pb20)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200