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MMBV609LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMBV609LT1G

Variable Capacitance Diode, Very HighFrequency,29pFC(T), 20V, Silicon, Hyperabrupt,TO-236AB


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MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Additional Feature HIGH Q
Breakdown Voltage-Min 20
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Cap Tolerance 10.34
Diode Capacitance Ratio-Min 1.8
Diode Capacitance-Nom 29
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 125
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Quality Factor-Min 250
Rep Pk Reverse Voltage-Max 20
Sub Category Varactors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Variable Capacitance Diode Classification HYPERABRUPT