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MMBZ18VAL,215 | NXP

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NXP MMBZ18VAL,215

Trans Voltage Suppressor Diode, 40W,14.5VV(RWM),Unidirectional, 2 Element, Silicon,TO-236AB


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature IEC-61643-321
Breakdown Voltage-Max 18.9
Breakdown Voltage-Min 17.1
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 40
Number of Elements 2
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.36
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2
Rep Pk Reverse Voltage-Max 14.5
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30