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MMBZ18VAL,215 | NXP

NXP MMBZ18VAL,215

Trans Voltage Suppressor Diode, 40W,14.5VV(RWM),Unidirectional, 2 Element, Silicon,TO-236AB


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature IEC-61643-321
Breakdown Voltage-Max 18.9
Breakdown Voltage-Min 17.1
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 40
Number of Elements 2
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.36
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2
Rep Pk Reverse Voltage-Max 14.5
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30