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MMUN2134LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMUN2134LT1G

Small Signal Bipolar Transistor, 0.1AI(C),50VV(BR)CEO, 1-Element, PNP, Silicon, TO-236AB


Ordering Info

In Stock: 18000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
9000-17999 $0.0203
18000+ $0.0189


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO 0.47
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.4
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signals
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON