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MMUN2211LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMUN2211LT1G

MMUN2211L Series 1.8 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-23


Ordering Info

In Stock: 3381000 Delivery

MOQ: 12000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
12000-3380999 $0.014
3381000+ $0.0131


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.4
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON