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MMUN2212LT1 | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMUN2212LT1

TRANSISTOR SOT-23


Ordering Info

In Stock: 1988

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON