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MRF6V2010NR1 | NXP SEMICONDUCTOR

NXP SEMICONDUCTOR MRF6V2010NR1

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 500

Quantity Cost
500 -



Electrical Characteristics

Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 110
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-270AA
JESD-30 Code R-PDFM-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Ma 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON





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