Request Quote













Request Quote


MRF6V2010NR1 | NXP

NXP MRF6V2010NR1

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 500

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500 -

Electrical Characteristics

Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 110
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-270AA
JESD-30 Code R-PDFM-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON