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Electrical Characteristics
| Access Mode | MULTI BANK PAGE BURST |
| Access Time-Max | 0.45 |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 333 |
| I/O Type | COMMON |
| Interleaved Burst Length | 4,8 |
| JESD-30 Code | R-PBGA-B84 |
| JESD-609 Code | e1 |
| Length | 12.5 |
| Memory Density | 1073741824 |
| Memory IC Type | DDR DRAM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 84 |
| Number of Words | 67108864 |
| Number of Words Code | 64M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 |
| Operating Temperature-Min | 0 |
| Organization | 64MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA84,9X15,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 1.8 |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1.2 |
| Sequential Burst Length | 4,8 |
| Standby Current-Max | 0.007 |
| Sub Category | DRAMs |
| Supply Current-Max | 0.23 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Width | 8 |