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MTD20N03HDLT4 | ON SEMICONDUCTOR

ON SEMICONDUCTOR MTD20N03HDLT4

Power Field-Effect Transistor, 20AI(D),30V,0.04ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 698

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 20
Drain Current-Max (ID) 20
Drain-source On Resistance-Max 0.04
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74
Pulsed Drain Current-Max (IDM) 60
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON