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MUN5211T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MUN5211T1G

MUN5211 Series 50 V 100 mA R1-10 kO R2-10 kO NPN Digital Transistor - SOT-323


Ordering Info

In Stock: 360000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
9000-359999 $0.0203
360000+ $0.0189


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.31
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON