Request Quote













Request Quote


MUN5215DW1T1G | ON SEMICONDUCTOR

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ON SEMICONDUCTOR MUN5215DW1T1G

MUN5215DW1 Series 1.4 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 160
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.385
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON