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MUN5311DW1T2G | ON SEMICONDUCTOR

ON SEMICONDUCTOR MUN5311DW1T2G

Small Signal Bipolar Transistor,0.1AI(C),50VV(BR)CEO, 2-Element, NPN and PNP,Silicon


Ordering Info

In Stock: 6000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00.95

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
6000+ $0.0676


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Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN AND PNP
Power Dissipation-Max (Abs) 0.256
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON