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MUN5311DW1T2G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MUN5311DW1T2G

Small Signal Bipolar Transistor,0.1AI(C),50VV(BR)CEO, 2-Element, NPN and PNP,Silicon


Ordering Info

In Stock: 18000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
6000-17999 $0.038
18000+ $0.0355


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Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN AND PNP
Power Dissipation-Max (Abs) 0.256
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON