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MVGSF1N02LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MVGSF1N02LT1G

Small Signal Field-EffectTransistor,N-Channel,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Configuration Single
Drain Current-Max (Abs) (ID) 0.75
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.4
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED