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MVGSF1N02LT1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR MVGSF1N02LT1G

Small Signal Field-EffectTransistor,N-Channel,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Configuration Single
Drain Current-Max (Abs) (ID) 0.75
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.4
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED