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ON SEMICONDUCTOR NJVMJD122T4G
NJVMJD122 Series 100 V 8 A NPN Complementary Darlington Power Transistor -TO-252
Ordering Info
In Stock: 0
MOQ: 2500
Package Quantity: 2500
HTS Code: 8541.29.00
ECCN: EAR99
COO: CN
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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 2500 | - |
Electrical Characteristics
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 8 |
| Collector-emitter Voltage-Max | 100 |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 100 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 20 |
| Reference Standard | AEC-Q101 |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 4 |