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NSS1C300ET4G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NSS1C300ET4G

Power Bipolar Transistor, 3AI(C),100VV(BR)CEO,1-Element, PNP,Silicon,Plastic/Epoxy, 2Pin


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: VN

Quantity Cost
2500 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 3
Collector-emitter Voltage-Max 100
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 33
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100