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Learn more about ECAD Model here.ON SEMICONDUCTOR NTB5605PT4G
Ordering Info
In Stock: 0
MOQ: 800
Package Quantity: 800
COO: CN
Subject to tariff fees.
| Quantity | Cost |
|---|---|
| 800 | - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 338 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 |
| Drain Current-Max (Abs) (ID) | 17 |
| Drain Current-Max (ID) | 18.5 |
| Drain-source On Resistance-Max | 0.14 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 73.5 |
| Pulsed Drain Current-Max (IDM) | 55 |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |