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NTD20P06LT4G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTD20P06LT4G


Ordering Info

In Stock: 10000 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.0095

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-9999 $0.5849
10000+ $0.5413


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Electrical Characteristics

Avalanche Energy Rating (Eas) 304
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 15
Drain Current-Max (ID) 15.5
Drain-source On Resistance-Max 0.15
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 54
Pulsed Drain Current-Max (IDM) 50
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON