Request Quote













Request Quote


NTE4151PT1G | ON SEMICONDUCTOR

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ON SEMICONDUCTOR NTE4151PT1G

Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-89-3


Ordering Info

In Stock: 90000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
9000-89999 $0.0237
90000+ $0.0221


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.76
Drain Current-Max (ID) 0.76
Drain-source On Resistance-Max 0.36
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.313
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON