Request Quote













Request Quote


NTF6P02T3G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTF6P02T3G

P-Channel 20 V 44 mOhm 8.3 W Surface Mount Power MOSFET - SOT-223


Ordering Info

In Stock: 224000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.29.00.55

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
4000-223999 $0.6444
224000+ $0.58


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 10
Drain Current-Max (ID) 10
Drain-source On Resistance-Max 0.05
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 8.3
Pulsed Drain Current-Max (IDM) 35
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON