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NTJD4001NT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTJD4001NT1G

Dual N-Channel 30 V 1 Ohm 272 mW Surface Mount Small Signal MOSFET - SOT-363


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.1026
6000+ $0.0957


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 0.25
Drain Current-Max (ID) 0.25
Drain-source On Resistance-Max 2.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.272
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON