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NTJD4401NT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTJD4401NT1G

Dual N-Channel 20 V 220 mOhm 270 mW Surface Mount Small Signal MOSFET SOT-363


Ordering Info

In Stock: 48000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-47999 $0.057
48000+ $0.0532


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.63
Drain Current-Max (ID) 0.63
Drain-source On Resistance-Max 0.375
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.55
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON