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NTJD5121NT1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTJD5121NT1G

Dual N-Channel 60 V 1.6 Ohm 250 mW Surface Mount Power MOSFET - SOT-363


Ordering Info

In Stock: 474000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-473999 $0.0688
474000+ $0.0635


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Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 0.295
Drain Current-Max (ID) 0.295
Drain-source On Resistance-Max 1.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.266
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON