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NTK3139PT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTK3139PT1G

P-Channel 20 V 380 mOhm 450 mW Surface Mount Power MOSFET - SOT-723


Ordering Info

In Stock: 16000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-15999 $0.0619
16000+ $0.0577


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.78
Drain Current-Max (ID) 0.78
Drain-source On Resistance-Max 0.48
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.55
Pulsed Drain Current-Max (IDM) 1.2
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON