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NTLJD4116NT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTLJD4116NT1G

Dual N-Channel 30 V 70 mO Surface Mount Power Mosfet - WDFN-6 (2x2)


Ordering Info

In Stock: 42000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: MY

Quantity Cost
3000-41999 $0.3643
42000+ $0.34


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 3
Drain Current-Max (ID) 2.5
Drain-source On Resistance-Max 0.09
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.52
Pulsed Drain Current-Max (IDM) 20
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON