Request Quote













Request Quote


NTR2101PT1G | ON SEMICONDUCTOR

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ON SEMICONDUCTOR NTR2101PT1G

Single P-Channel 8 V 120 mOhm 15 nC 0.96 W Silicon SMT Mosfet - SOT-23


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.0927
6000+ $0.0865


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 8
Drain Current-Max (Abs) (ID) 3.7
Drain Current-Max (ID) 3.7
Drain-source On Resistance-Max 0.052
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.96
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON