Request Quote













Request Quote


NTZD3155CT1G | ON SEMICONDUCTOR

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ON SEMICONDUCTOR NTZD3155CT1G

Dual N & P-Channel 20 V 0.4/0.5 mOhm 250 mW Small Signal MOSFET - SOT-563


Ordering Info

In Stock: 36000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-35999 $0.1134
36000+ $0.1059


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.54
Drain Current-Max (ID) 0.54
Drain-source On Resistance-Max 0.55
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 0.25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON