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NTZD5110NT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR NTZD5110NT1G

Dual N-Channel 60 V 1.6 Ohm 250 mW Small Signal MOSFET - SOT-563


Ordering Info

In Stock: 44000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-43999 $0.082
44000+ $0.0765


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 0.294
Drain Current-Max (ID) 0.294
Drain-source On Resistance-Max 1.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.25
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON