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NVF2955T1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NVF2955T1G

Single P-Channel 60 V 2.6 A 170 mOhm Surface Mount Power MOSFET SOT-223


Ordering Info

In Stock: 2000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00.55

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000-1999 $0.7917
2000+ $0.7308


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Electrical Characteristics

Avalanche Energy Rating (Eas) 225
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 2.6
Drain Current-Max (ID) 1.7
Drain-source On Resistance-Max 0.185
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.3
Pulsed Drain Current-Max (IDM) 17
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON