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Electrical Characteristics
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 |
| Drain Current-Max (ID) | 0.35 |
| Drain-source On Resistance-Max | 1.4 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Reference Standard | AEC-Q101; IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |