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Electrical Characteristics
| Drain Current-Max (Abs) (ID) | 0.2 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.445 |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |