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NX3020NAKW,115 | NEXPERIA

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NEXPERIA NX3020NAKW,115

Small Signal Field-Effect Transistor, 0.18AI(D),30V, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 96000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Quantity Cost
6000-95999 $0.0301
96000+ $0.0281


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) .18
Drain-source On Resistance-Max 5.2
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON