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Electrical Characteristics
| Access Time-Max | 200 |
| I/O Type | COMMON |
| JESD-30 Code | R-PDIP-T18 |
| JESD-609 Code | e0 |
| Memory Density | 4096 |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 4 |
| Number of Terminals | 18 |
| Number of Words | 1024 |
| Number of Words Code | 1K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 |
| Operating Temperature-Min | 0 |
| Organization | 1KX4 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | DIP |
| Package Equivalence Code | DIP18,.3 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Power Supplies | 5 |
| Qualification Status | Not Qualified |
| Sub Category | SRAMs |
| Supply Voltage-Nom (Vsup) | 5 |
| Surface Mount | NO |
| Technology | MOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54 |
| Terminal Position | DUAL |