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PBSS5580PA,115 | NXP

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NXP PBSS5580PA,115

Small Signal Bipolar Transistor, 4A I(C),80VV(BR)CEO, 1-Element, PNP, Silicon


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

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Quantity Cost
3000 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 4
Collector-emitter Voltage-Max 80
Configuration SINGLE
DC Current Gain-Min (hFE) 70
JESD-30 Code S-PDSO-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 110