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PBSS9110D,115 | NXP

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NXP PBSS9110D,115

Small Signal Bipolar Transistor, 1A I(C),100VV(BR)CEO, 1-Element, PNP, Silicon


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Collector Current-Max (IC) 1
Collector-emitter Voltage-Max 100
Configuration SINGLE
DC Current Gain-Min (hFE) 125
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100