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PD55003L-E | ST MICROELECTRONICS

ST MICROELECTRONICS PD55003L-E

PD55003L-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWER FLAT


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40
Drain Current-Max (Abs) (ID) 2.5
Drain Current-Max (ID) 2.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-PQCC-N5
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 14
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON