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PD55008TR-E | ST MICROELECTRONICS

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ST MICROELECTRONICS PD55008TR-E

RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 600

Package Quantity: 600

Quantity Cost
600 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40
Drain Current-Max (Abs) (ID) 4
Drain Current-Max (ID) 4
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52.8
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON