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PDTA115TT,215 | NEXPERIA

NEXPERIA PDTA115TT,215

Small Signal Bipolar Transistor, 0.1A I(C),50VV(BR)CEO, 1-Element, PNP, Silicon, TO-236AB


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTOR
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON