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PDTA123JT,215 | NEXPERIA

NEXPERIA PDTA123JT,215

PDTA123JT Series 50 V 100 mA SMT PNP Resistor-Equipped Transistor - SOT-23


Ordering Info

In Stock: 0

MOQ: 12000

Package Quantity: 3000

HTS Code: 8541.21.0075

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
12000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 180