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PDTC114ET,215 | NEXPERIA

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NEXPERIA PDTC114ET,215

PDTC114ET Series 50 V 100 mA NPN Resistor-Equipped Transistor - SOT-23


Ordering Info

In Stock: 0

MOQ: 12000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
12000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) .1
Collector-base Capacitance-Max 3.5
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 230
VCEsat-Max .3